Semiconductor Devices: Physics and Technology, International Student Version

Name: Semiconductor Devices: Physics and Technology, International Student Version
Price: 6790 ISK
Availability: InStock
Author: Simon M. Sze
ISBN: 9781118531327

Höfundur: Simon M. Sze (Útgáfa: 3)

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Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.

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Útgefandi: Wiley Global Education US

ISBN: 9781118531327

Print ISBN: 9780470873670

Format: Page Fidelity (PDF)

Útgáfa: 3

Höfundar: Simon M. Sze

Tungumál: English

Útgefið: 03/2011

Prent takmörkun á líftíma: 100

Prent takmörkun: 10

Afritunar takmörkun: 2

Kaflar

Title Page
Copyright
Contents
Preface
What's New in the Third Edition
Topical Coverage
Key Features
Textbook Supplements
Acknowledgments
Chapter 0: Introduction
0.1: Semiconductor Devices
0.1.1: Device Building Blocks
0.1.2: Major Semiconductor Devices
0.2: Semiconductor Technology
0.2.1: Key Semiconductor Technologies
0.2.2: Technology Trends
Summary
Part I: Semiconductor Physics
Chapter 1: Energy Bands and Carrier Concentration in Thermal Equilibrium
1.1: Semiconductor Materials
1.1.1: Element Semiconductors
1.1.2: Compound Semiconductors
1.2: Basic Crystal Structures
1.2.1: Unit Cell
1.2.2: The Diamond Structure
1.2.3: Crystal Planes and Miller Indices
1.3: Valence Bonds
1.4: Energy Bands
1.4.1: Energy Levels of Isolated Atoms
1.4.2: The Energy-Momentum Diagram
1.4.3: Conduction in Metals, Semiconductors, and Insulators
1.5: Intrinsic Carrier Concentration
1.6: Donors and Acceptors
1.6.1: Nondegenerate Semiconductor
1.6.2: Degenerate Semiconductor
Summary
Chapter 2: Carrier Transport Phenomena
2.1: Carrier Drift
2.1.1: Mobility
2.1.2: Resistivity
2.1.3: The Hall Effect
2.2: Carrier Diffusion
2.2.1: Diffusion Process
2.2.2: Einstein Relation
2.2.3: Current Density Equations
2.3: Generation and Recombination Processes
2.3.1: Direct Recombination
2.3.2: Quasi-Fermi Level
2.3.3: Indirect Recombination
2.3.4: Surface Recombination
2.4: Continuity Equation
2.4.1: Steady-State Injection from One Side
2.4.2: Minority Carriers at the Surface
2.4.3: The Haynes-Shockley Experiment
2.5: Thermionic Emission Process
2.6: Tunneling Process
2.7: Space-Charge Effect
2.8: High-Field Effects
Summary
Part II: Semiconductor Devices
Chapter 3: p-n Junction
3.1: Thermal Equilibrium Condition
3.1.1: Band Diagram
3.1.2: Equilibrium Fermi Levels
3.1.3: Space Charge
3.2: Depletion Region
3.2.1: Abrupt Junction
3.2.2: Linearly Graded Junction
3.3: Depletion Capacitance
3.3.1: Capacitance-Voltage Characteristics
3.3.2: Evaluation of Impurity Distribution
3.3.3: Varactor
3.4: Current-Voltage Characteristics
3.4.1: Ideal Characteristics
3.4.2: Generation-Recombination and High-Injection Effects
3.4.3: Temperature Effect
3.5: Charge Storage and Transient Behavior
3.5.1: Minority-Carrier Storage
3.5.2: Diffusion Capacitance
3.5.3: Transient Behavior
3.6: Junction Breakdown
3.6.1: Tunneling Effect
3.6.2: Avalanche Multiplication
3.7: Heterojunction
Summary
Chapter 4: Bipolar Transistors and Related Devices
4.1: Transistor Action
4.1.1: Operation in the Active Mode
4.1.2: Current Gain
4.2: Static Characteristics of Bipolar Transistors
4.2.1: Carrier Distribution in Each Region
4.2.2: Ideal Transistor Currents for Active Mode Operation
4.2.3: Modes of Operation
4.2.4: Current-Voltage Characteristics of Common-Base and Common-Emitter Configurations
4.3: Frequency Response and Switching of Bipolar Transistors
4.3.1: Frequency Response
4.3.2: Switching Transients
4.4: Nonideal Effects
4.4.1: Emitter Bandgap Narrowing
4.4.2: Graded-Base Region
4.4.3: Current Crowding
4.4.4: Generation-Recombination Current and High-Current Effect
4.5: Heterojunction Bipolar Transistors
4.5.1: Current Gain in HBT
4.5.2: Basic HBT Structures
4.5.3: Advanced HBTs
4.6: Thyristors and Related Power Devices
4.6.1: Basic Characteristics
4.6.2: Bidirectional Thyristor
Summary
Chapter 5: MOS Capacitor and MOSFET
5.1: Ideal MOS Capacitor
5.2: SiO2-Si MOS Capacitor
5.3: Carrier Transport in MOS Capacitors
5.3.1: Basic Conduction Processes in Insulators
5.3.2: Dielectric Breakdown
5.4: Charge-Coupled Devices (CCD)
5.5: MOSFET Fundamentals
5.5.1: Basic Characteristics
5.5.2: Types of MOSFET
5.5.3: Threshold Voltage Control
Summary
Chapter 6: Advanced MOSFET and Related Devices
6.1: MOSFET Scaling
6.1.1: Short-Channel Effects
6.1.2: Scaling Rules
6.1.3: MOSFET Structures to Control Short-Channel Effects
6.2: CMOS and BiCMOS
6.2.1: The CMOS Inverter
6.2.2: Latch-up
6.2.3: CMOS Image Sensor
6.2.4: BiCMOS
6.3: MOSFET on Insulator
6.3.1: Thin Film Transistor (TFT)
6.3.2: Silicon-on-Insulator (SOI) Devices
6.3.3: Three-Dimensional Structures
6.4: MOS Memory Structures
6.4.1: DRAM
6.4.2: SRAM
6.4.3: Nonvolatile Memory
6.5: Power MOSFET
Summary
Chapter 7: MESFET and Related Devices
7.1: Metal-Semiconductor Contacts
7.1.1: Basic Characteristics
7.1.2: The Schottky Barrier
7.1.3: The Ohmic Contact
7.2: MESFET
7.2.1: Basic Device Structures
7.2.2: Principles of Operation
7.2.3: Current-Voltage Characteristics
7.2.4: High-Frequency Performance
7.3: MODFET
7.3.1: MODFET Fundamentals
7.3.2: Current-Voltage Characteristics
7.3.3: Cutoff Frequency
Summary
Chapter 8: Microwave Diodes; Quantum-Effect and Hot-Electron Devices
8.1: Microwave Frequency Bands
8.2: Tunnel Diode
8.3: IMPATT Diode
8.3.1: Static Characteristics
8.3.2: Dynamic Characteristics
8.4: Transferred-Electron Devices
8.4.1: Negative Differential Resistance
8.4.2: Device Performances
8.5: Quantum-Effect Devices
8.5.1: Resonant Tunneling Diode
8.5.2: Unipolar Resonant Tunneling Transistor
8.6: Hot-Electron Devices
8.6.1: Hot-Electron HBT
8.6.2: Real-Spaceâ€“Transfer Transistor
Summary
Chapter 9: Light Emitting Diodes and Lasers
9.1: Radiative Transitions and Optical Absorption
9.1.1: Radiative Transitions
9.1.2: Optical Absorption
9.2: Light-Emitting Diodes
9.2.1: Structure of LED
9.2.2: Optical characteristics of the LED
9.2.3: Quantum Efficiency
9.3: Various Light-Emitting Diodes
9.3.1: Visible LEDs
9.3.2: Organic LED
9.3.3: White-Light LED
9.3.4: Infrared LED
9.4: Semiconductor Lasers
9.4.1: Semiconductor Materials
9.4.2: Laser Operation
9.4.3: Basic Laser Structure
9.4.4: Distributed Feedback Lasers
9.4.5: Quantum-Well Lasers
9.4.6: Separate-Confinement Heterostructure MQW laser
9.4.7: Quantum-Wire and Quantum-Dot lasers
9.4.8: Vertical-Cavity Surface-Emitting Laser (VCSEL)
9.4.9: Quantum-Cascade Laser
Summary
Chapter 10: Photodetectors and Solar Cells
10.1: Photodetectors
10.1.1: Photoconductor
10.1.2: Photodiode
10.1.3: p-i-n Photodiode
10.1.4: Metal-Semiconductor Photodiode
10.1.5: Avalanche Photodiode
10.1.6: Phototransistor
10.1.7: Heterojunction Photodiode
10.1.8: Superlattice APD
10.1.9: Quantum-Well Infrared Photodetector
10.2: Solar Cells
10.2.1: Solar Radiation
10.2.2: p-n Junction Solar Cell
10.2.3: Conversion Efficiency
10.3: Silicon and Compound-Semiconductor Solar Cells
10.3.1: Wafer-Based Solar Cells
10.3.2: Thin-Film Solar Cells
10.4: Third-Generation Solar Cells
10.5: Optical Concentration
Summary
Part III: Semiconductor Technology
Chapter 11: Crystal Growth and Epitaxy
11.1: Silicon Crystal Growth from the Melt
11.1.1: Starting Material
11.1.2: The Czochralski Technique
11.1.3: Distribution of Dopant
11.1.4: Effective Segregation Coefficient
11.2: Silicon Float-Zone Proces
11.3: GaAs Crystal-Growth Techniques
11.3.1: Starting Materials
11.3.2: Crystal-Growth Techniques
11.4: Material Characterization
11.4.1: Wafer Shaping
11.4.2: Crystal Characterization
11.5: Epitaxial-Growth Techniques
11.5.1: Chemical-Vapor Deposition
11.5.2: Molecular-Beam Epitaxy
11.6: Structures and Defects in Epitaxial Layers
11.6.1: Lattice-Matched and Strained-Layer Epitaxy
11.6.2: Compound Semiconductors on Silicon
Summary
Chapter 12: Film Formation
12.1: Thermal Oxidation
12.1.1: Kinetics of Growth
12.1.2: Thin Oxide Growth
12.2: Chemical Vapor Deposition of Dielectrics
12.2.1: Chemical Vapor Deposition
12.2.2: Silicon Dioxide
12.2.3: Silicon Nitride
12.2.4: Low-Dielectric-Constant Materials
12.2.5: High-Dielectricâ€“Constant Materials
12.3: Chemical Vapor Deposition of Polysilicon
12.4: Atom Layer Deposition
12.5: Metallization
12.5.1: Physical-Vapor Deposition
12.5.2: CVD Metal Deposition
12.5.3: Aluminum Metallization
12.5.4: Copper Metallization
12.5.5: Chemical-Mechanical Polishing
12.5.6: Silicide
Summary
Chapter 13: Lithography and Etching
13.1: Optical Lithography
13.1.1: The Clean Room
13.1.2: Exposure Equipment
13.1.3: Masks
13.1.4: Photoresist
13.1.5: Pattern Transfer
13.1.6: Resolution Enhancement Techniques
13.2: Next-Generation Lithographic Methods
13.2.1: Electron-Beam Lithography
13.2.2: Extreme-Ultraviolet Lithography
13.2.3: Ion-Beam Lithography
13.2.4: Comparison of Various Lithographic Methods
13.3: Wet Chemical Etching
13.3.1: Silicon Etching
13.3.2: Silicon Dioxide Etching
13.3.3: Silicon Nitride and Polysilicon Etching
13.3.4: Aluminum Etching
13.3.5: Gallium Arsenide Etching
13.4: Dry Etching
13.4.1: Plasma Fundamentals
13.4.2: Surface Chemistry
13.4.3: Capacitively Coupled Plasmas Etchers
13.4.4: Inductively Coupled Plasma Etchers
13.4.5: Plasma Diagnostics and End-Point Control
13.4.6: Etching Chemistries and Applications
Summary
Chapter 14: Impurity Doping
14.1: Basic Diffusion Process
14.1.1: Diffusion Equation
14.1.2: Diffusion Profiles
14.1.3: Evaluation of Diffused Layers
14.2: Extrinsic Diffusion
14.2.1: Concentration-Dependent Diffusivity
14.2.2: Diffusion Profiles
14.3: Diffusion-Related Processes
14.3.1: Lateral Diffusion
14.3.2: Impurity Redistribution During Oxidation
14.4: Range of Implanted Ions
14.4.1: Ion Distribution
14.4.2: Ion Stopping
14.4.3: Ion Channeling
14.5: Implant Damage and Annealing
14.5.1: Implant Damage
14.5.2: Annealing
14.6: Implantation-Related Processes
14.6.1: Multiple Implantation and Masking
14.6.2: Tilt-Angle Ion Implantation
14.6.3: High-Energy and High-current Implantation
Summary
Chapter 15: Integrated Devices
15.1: Passive Components
15.1.1: The Integrated-Circuit Resistor
15.1.2: The Integrated-Circuit Capacitor
15.1.3: The Integrated-Circuit Inductor
15.2: Bipolar Technology
15.2.1: The Basic Fabrication Process
15.2.2: Dielectric Isolation
15.2.3: Self-Aligned Double-Polysilicon Bipolar Structure
15.3: MOSFET Technology
15.3.1: The Basic Fabrication Process
15.3.2: CMOS Technology
15.3.3: BiCMOS Technology
15.3.4: FinFET Technology
15.3.5: Memory Devices
15.4: MESFET Technology
15.5: Challenges for Nanoelectronics
15.5.1: Challenges for Integration
15.5.2: System-on-a-Chip
Summary
Appendix A: List of Symbols
Appendix B: International Systems of Units (SI Units)
Appendix C: Unit Prefixes
Appendix D: Greek Alphabet
Appendix E: Physical Constants
Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K
Appendix G: Properties of Si and GaAs at 300 K
Appendix H: Derivation of the Density of States in a Semiconductor
Appendix I: Derivation of Recombination Rate for Indirect Recombination
Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
Appendix K: Basic Kinetic Theory of Gases
Appendix L: Answers to Selected Problems
Photo credits
Index
EULA