Principles of Semiconductor Devices
Kaup valmöguleikar
For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated.
The book is divided into 4 parts: Part I on Semiconductor Physics; Part II on the principles of operation and modeling of the fundamental junctions and transistors; Part III on the diode, MOSFET and BJT topics needed for circuit design, and Part IV on photonic devices, microwave FETs, negative-resistance diodes, and power devices. Within each part, material is presented hierarchically, with core topics first, followed by advanced topics.
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- Oxford University Press Academic US
- 9780197602225
- 9780199896349
- Page Fidelity (PDF)
- 2
- Sima Dimitrijev
- English
- 2011-10-14
- 100
Kaflar
- Contents
- Preface
- PART I: INTRODUCTION TO SEMICONDUCTORS
- 1 Introduction to Crystals and Current Carriers in Semiconductors: The Atomic-Bond Model
- 1.1 INTRODUCTION TO CRYSTALS
- 1.2 CURRENT CARRIERS
- *1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES
- Summary
- Problems
- Review Questions
- 2 The Energy-Band Model
- 2.1 ELECTRONS AS WAVES
- 2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS
- 2.3 ELECTRONS AND HOLES AS PARTICLES
- 2.4 POPULATION OF ELECTRON STATES: CONCENTRATIONS OF ELECTRONS AND HOLES
- Summary
- Problems
- Review Questions
- 3 Drift
- 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD
- 3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY
- 3.3 CARRIER MOBILITY
- Summary
- Problems
- Review Questions
- 4 Diffusion
- 4.1 DIFFUSION-CURRENT EQUATION
- 4.2 DIFFUSION COEFFICIENT
- 4.3 BASIC CONTINUITY EQUATION
- Summary
- Problems
- Review Questions
- 5 Generation and Recombination
- 5.1 GENERATION AND RECOMBINATION MECHANISMS
- 5.2 GENERAL FORM OF THE CONTINUITY EQUATION
- 5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEY–READ–HALL (SRH) THEORY
- Summary
- Problems
- Review Questions
- PART II: FUNDAMENTAL DEVICE STRUCTURES
- 6 Junctions
- 6.1 P–N JUNCTION PRINCIPLES
- 6.2 DC MODEL
- 6.3 CAPACITANCE OF REVERSE-BIASED P–N JUNCTION
- 6.4 STORED-CHARGE EFFECTS
- 6.5 METAL–SEMICONDUCTOR CONTACT
- Summary
- Problems
- Review Questions
- 7 MOSFET
- 7.1 MOS CAPACITOR
- 7.2 MOSFET PRINCIPLES
- 7.3 PRINCIPAL CURRENT–VOLTAGE CHARACTERISTICS AND EQUATIONS
- 7.4 SECOND-ORDER EFFECTS
- 7.5 NANOSCALE MOSFETs
- *7.6 MOS-BASED MEMORY DEVICES
- Summary
- Problems
- Review Questions
- 8 BJT
- 8.1 BJT PRINCIPLES
- 8.2 PRINCIPAL CURRENT–VOLTAGE CHARACTERISTICS: EBERS–MOLL MODEL IN SPICE
- 8.3 SECOND-ORDER EFFECTS
- 8.4 HETEROJUNCTION BIPOLAR TRANSISTOR
- Summary
- Problems
- Review Questions
- PART III: SUPPLEMENTARY TOPICS
- 9 Physics of Nanoscale Devices
- 9.1 SINGLE-CARRIER EVENTS
- 9.2 TWO-DIMENSIONAL TRANSPORT IN MOSFETs AND HEMTs
- 9.3 ONE-DIMENSIONAL TRANSPORT IN NANOWIRES AND CARBON NANOTUBES
- Summary
- Problems
- Review Questions
- 10 Device Electronics: Equivalent Circuits and SPICE Parameters
- 10.1 DIODES
- 10.2 MOSFET
- 10.3 BJT
- Summary
- Problems
- Review Questions
- 11 Photonic Devices
- 11.1 LIGHT-EMITTING DIODES (LED)
- 11.2 PHOTODETECTORS AND SOLAR CELLS
- 11.3 LASERS
- Summary
- Problems
- Review Questions
- 12 JFET and MESFET
- 12.1 JFET
- 12.2 MESFET
- Summary
- Problems
- Review Questions
- 13 Power Devices
- 13.1 POWER DIODES
- 13.2 POWER MOSFET
- 13.3 IGBT
- 13.4 THYRISTOR
- Summary
- Problems
- Review Questions
- Bibliography
- Answers to Selected Problems
- Index
- A
- B
- C
- D
- E
- F
- G
- H
- I
- J
- K
- L
- M
- N
- O
- P
- Q
- R
- S
- T
- U
- V
- W
- Z